ACE2607B datasheet, transistor equivalent, ACE Technology

ACE2607B transistor equivalent, p-channel enhancement mode field effect transistor.

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Features and benefits

* VDS(V)=-30V, ID=-3.5A
* RDS(ON)=52mΩ@VGS=-10V
* RDS(ON)=68mΩ@VGS=-4.5V
* High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter .

Description

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power management and other battery p.

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